| PART |
Description |
Maker |
| MMBZ5235B MMBZ5250B MMBZ5243B MMBZ5252B MMBZ5221B |
Zeners 6.8 V, 0.35 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
3-32V Dual Operational Amplifier, Ta = 0 to 70°C; Package: Micro8™; No of Pins: 8; Container: Tape and Reel; Qty per Container: 4000
3.9V, 0.35W Zener Diode
27V, 0.35W Zener Diode
6.8V, 0.35W Zener Diode
33V, 0.35W Zener Diode
13V, 0.35W Zener Diode
9.1V, 0.35W Zener Diode
15V, 0.35W Zener Diode
30V, 0.35W Zener Diode
16V, 0.35W Zener Diode
3.3V, 0.35W Zener Diode
20V, 0.35W Zener Diode
|
Fairchild Semiconductor, Corp.
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
|
| T1G4004532-FS T1G4004532-FSEVB1 |
45W, 32V DC ?3.5 GHz, GaN RF Power Transistor
|
TriQuint Semiconductor
|
| CG2H80030D |
30 W, 8.0 GHz, GaN HEMT Die
|
Cree, Inc
|
| CG2H80015D |
15 W, 8.0 GHz, GaN HEMT Die
|
Cree, Inc
|
| CGHV59070F-TB |
70 W, 4.4-5.9 GHz, 50 V, RF Power GaN HEMT
|
Cree, Inc
|
| TGA2958 |
13 to 18 GHz 2W GaN Driver Amplifier
|
TriQuint Semiconductor
|
| T1G6001528-Q3 T1G6001528-Q3-15 T1G6001528-Q3-EVB1 |
DC ?6 GHz 18 W GaN RF Power Transistor
DC 6 GHz 18 W GaN RF Power Transistor
|
TriQuint Semiconductor
|
| TGA2624-CP TGA2624-CP-15 |
9 to 10 GHz, 16 W GaN Power Amplifier
|
TriQuint Semiconductor
|
| CMPA2560025D |
25 W, 2.5 - 6.0 GHz, GaN MMIC, Power Amplifier
|
Cree, Inc
|
| TGA2576-FL-15 |
2.5 to 6 GHz GaN HEMT Power Amplifier
|
TriQuint Semiconductor
|
| T2G6003028-FS-EVB1 T2G6003028-FS-15 T2G6003028-FS- |
30W, 28V DC 6 GHz, GaN RF Power Transistor
|
TriQuint Semiconductor
|
|
